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2SK1762
Silicon N Channel MOS FET
Application
TO-220FM
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
12 2 1
3 1. Gate 1. Gate 2. Drain 2. Drain 3. Source 3. Source
3
Table 1 Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** PW 10 s, duty cycle 1 % Value at Tc = 25 C Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 250 30 12 48 12 35 150 -55 to +150 Unit V V A A A W C C
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
2SK1762
Table 2 Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 6 A VGS = 10 V * ID = 6 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 6 A VGS = 10 V RL = 5
-------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
30 -- -- V
--------------------------------------------------------------------------------------
-- -- 2.0 -- -- -- -- 0.23 10 250 3.0 0.35 A A V
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
5.0 8.0 -- S
--------------------------------------------------------------------------------------
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 1100 440 68 20 65 100 44 1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 12 A, VGS = 0 IF = 12 A, VGS = 0, diF / dt = 100 A / s
---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
-- 200 -- ns
-------------------------------------------------------------------------------------- See characteristic curves of 2SK1761.
2SK1762
Power vs. Temperature Derating
80
Maximum Safe Operation Area
50 30
10
PW
10 s
0
Pch (W)
60
10
D
Drain Current I D (A)
C
=
1
10 m s
s
m
s
O
Channel Dissipation
3
pe
ra
tio
(1
n
40
(T
sh
c
ot
)
1 Operation in this area is limited by R DS (on) 0.3 0.1 Ta = 25C
=
25
C
)
20
0
50 100 Case Temperature
150 Tc (C)
200
0.05 1
3
10
30
100
300
1000
Drain to Source Voltage V DS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t) 3 D=1 1.0 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 1 shot Pulse 100 1m 10 m Pulse Width PW (S) 100 m 1 10 ch - c(t) = s(t) . ch - c ch - c = 3.57C / W. Tc = 25C PW D= T P DM T PW Tc = 25C

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